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Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures

Název česky Fotoluminiscence a magnetofotoluminiscence vertikálně korelovaných kvantových teček InAs/GaAs
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HOSPODKOVÁ Alice OSWALD Jiří KŘÁPEK Vlastimil PANGRÁC Jiří KULDOVÁ Karla HULICIUS Eduard HUMLÍČEK Josef ZEMAN Josef

Rok publikování 2007
Druh Článek v odborném periodiku
Časopis / Zdroj Physica E
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
Obor Fyzika pevných látek a magnetismus
Klíčová slova self-assembled quantum dots; photoluminescence; magnetophotoluminescence
Popis We report on photoluminescence of a series of vertically stacked multilayer quantum dot structures. Our analysis of the data taken at different excitation powers and in the magnetic field up to 24T yields a useful insight into the electronic structure of the InAs/GaAs quantum dot structures. The data are compared with results of model electronic structure calculations for flat dots, including the effects of the strain field. The calculations suggest that the difference between the energies of the ground and first excited transitions is mainly determined by the lateral dimensions of the dots. A comparison of the experimental results with the theoretical ones reveals an increase of the dot dimensions (both height and diameter) and a decrease of the aspect ratio (height/diameter) with increasing number of the quantum dot layers. For seven layer samples, the wavelength of 1:3 mm has been achieved. The increase of the thickness of the spacing layers between adjacent dot layers leads to a decrease of the lateral dimensions of the dots, accompanied by an increase of the aspect ratio and of the energy separation between the ground and first excited transitions.
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