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Spectroscopic ellipsometry of inhomogeneous thin films exhibiting thickness non-uniformity and transition layers

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OHLÍDAL Ivan VOHÁNKA Jiří BURŠÍKOVÁ Vilma FRANTA Daniel ČERMÁK Martin

Rok publikování 2020
Druh Článek v odborném periodiku
Časopis / Zdroj Optics Express
Fakulta / Pracoviště MU

Přírodovědecká fakulta

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Doi http://dx.doi.org/10.1364/OE.28.000160
Klíčová slova Amorphous silicon; Extinction coefficients; Light scattering; Optical constants; Refractive index; Thin films
Popis In this paper the complete optical characterization of an inhomogeneous polymer-like thin film of SiOxCyHz exhibiting a thickness non-uniformity and transition layer at the boundary between the silicon substrate and this film is performed using variable angle spectroscopic ellipsometry. The Campi-Coriasso dispersion model was utilized for describing the spectral dependencies of the optical constants of the SiOxCyHz thin film and transition layer. The multiple-beam interference model was used for expressing inhomogeneity of the SiOxCyHz thin film. The thickness non-uniformity of this film was taken into account by means of the averaging of the elements of the Mueller matrix performed using the thickness distribution for the wedge-shaped non-uniformity. The spectral dependencies of the optical constants of the SiOxCyHz thin film at the upper and lower boundaries together with the spectral dependencies of the optical constants of the transition layer were determined. Furthermore, the thickness values of the SiOxCyHz film and transition layer, profiles of the optical constants of the SiOxCyHz thin film and the rms value of local thicknesses corresponding to its thickness non-uniformity were determined. Thus, all the parameters characterizing this complicated film were determined without any auxiliary methods.
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