Informace o publikaci

Millisecond X-ray reflectometry and neural network analysis: unveiling fast processes in spin coating

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SCHUMI-MAREČEK David BERTRAM Florian MIKULÍK Petr VARSHNEY Devanshu NOVÁK Jiří KOWARIK Stefan

Rok publikování 2024
Druh Článek v odborném periodiku
Časopis / Zdroj Journal of Applied Crystallography
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www https://journals.iucr.org/j/issues/2024/02/00/jo5099/index.html
Doi http://dx.doi.org/10.1107/S1600576724001171
Klíčová slova millisecond XRR; neural network analysis; spin coating; X-ray reflectometry; X-ray reflectometry
Popis X-ray reflectometry (XRR) is a powerful tool for probing the structural characteristics of nanoscale films and layered structures, which is an important field of nanotechnology and is often used in semiconductor and optics manufacturing. This study introduces a novel approach for conducting quantitative high-resolution millisecond monochromatic XRR measurements. This is an order of magnitude faster than in previously published work. Quick XRR (qXRR) enables real time and in situ monitoring of nanoscale processes such as thin film formation during spin coating. A record qXRR acquisition time of 1.4 ms is demonstrated for a static gold thin film on a silicon sample. As a second example of this novel approach, dynamic in situ measurements are performed during PMMA spin coating onto silicon wafers and fast fitting of XRR curves using machine learning is demonstrated. This investigation primarily focuses on the evolution of film structure and surface morphology, resolving for the first time with qXRR the initial film thinning via mass transport and also shedding light on later thinning via solvent evaporation. This innovative millisecond qXRR technique is of significance for in situ studies of thin film deposition. It addresses the challenge of following intrinsically fast processes, such as thin film growth of high deposition rate or spin coating. Beyond thin film growth processes, millisecond XRR has implications for resolving fast structural changes such as photostriction or diffusion processes.
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