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Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules

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KLENOVSKÝ Petr KŘÁPEK Vlastimil HUMLÍČEK Josef

Druh Článek v odborném periodiku
Časopis / Zdroj ACTA PHYSICA POLONICA A
Fakulta / Pracoviště MU

Středoevropský technologický institut

Citace
WWW http://przyrbwn.icm.edu.pl/APP/PDF/129/a129z1ap12.pdf
Doi http://dx.doi.org/10.12693/APhysPolA.129.A-62
Obor Fyzika pevných látek a magnetismus
Klíčová slova quantum dots; type-II bandalignment; quantum computing; theory
Popis We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4 ueV/325 ueV for the case (i)/(ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. Because the predicted tunability range was limited, we propose an approach for its enhancement.
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