Informace o publikaci

Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging

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LI Z.J. DANILEWSKY A.N. HELFEN L. MIKULÍK Petr HAENSCHKE D. WITTGE J. ALLEN D. MCNALLY P. BAUMBACH T.

Rok publikování 2015
Druh Článek v odborném periodiku
Časopis / Zdroj Journal of Synchrotron Radiation
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www http://journals.iucr.org/s/issues/2015/04/00/ie5133/
Doi http://dx.doi.org/10.1107/S1600577515009650
Obor Fyzika pevných látek a magnetismus
Klíčová slova XMDI; nanoindentation; silicon; strain; defect; x-rays; microdiffraction; imaging
Popis Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.