Informace o publikaci
Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging
| Autoři | |
|---|---|
| Rok publikování | 2015 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Journal of Synchrotron Radiation |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | http://journals.iucr.org/s/issues/2015/04/00/ie5133/ |
| Doi | https://doi.org/10.1107/S1600577515009650 |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | XMDI; nanoindentation; silicon; strain; defect; x-rays; microdiffraction; imaging |
| Popis | Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods. |