Informace o publikaci
SiO2/Si etching in atmospheric pressure hydrogen DBD plasma
| Autoři | |
|---|---|
| Rok publikování | 2015 |
| Druh | Konferenční abstrakty |
| Fakulta / Pracoviště MU | |
| Citace | |
| Popis | The SiO2/Si etching was studied in DCSBD discharge generated in pure hydrogen at atmospheric pressure and room temeperature conditions. The estimated etching rate of SiO2 was approx. 1 nm/min. |
| Související projekty: |