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Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect

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ABERL Johannes KLENOVSKÝ Petr WILDMANN Johannes S. MARTÍN-SÁNCHEZ Javier FROMHERZ Thomas ZALLO Eugenio HUMLÍČEK Josef RASTELLI Armando TROTTA Rinaldo

Druh Článek v odborném periodiku
Časopis / Zdroj Physical Review B
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
WWW https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.045414
Doi http://dx.doi.org/10.1103/PhysRevB.96.045414
Obor Fyzika pevných látek a magnetismus
Klíčová slova piezoelectricity; quantum dot; strain tuning; NIP diode; electric dipole
Popis We show that anisotropic biaxial stress can be used to tune the built-in dipole moment of excitons confined in In(Ga)As quantum dots up to complete erasure of its magnitude and inversion of its sign. We demonstrate that this phenomenon is due to piezoelectricity. We present a model to calculate the applied stress, taking advantage of the so-called piezotronic effect, which produces significant changes in the current-voltage characteristics of the strained diode-membranes containing the quantum dots. Finally, self-consistent k.p calculations reveal that the experimental findings can be only accounted for by the nonlinear piezoelectric effect, whose importance in quantum dot physics has been theoretically recognized although it has proven difficult to single out experimentally.
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