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Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots

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HACKL Florian GRYDLIK Martyna KLENOVSKÝ Petr SCHAEFFLER Friedrich FROMHERZ Thomas BREHM Moritz

Druh Článek v odborném periodiku
Časopis / Zdroj Annalen der Physik (Berlin)
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
WWW https://onlinelibrary.wiley.com/doi/epdf/10.1002/andp.201800259
Doi http://dx.doi.org/10.1002/andp.201800259
Klíčová slova SiGe/Si;kvantove tecky;rekombinacni procesy;kp teorie
Popis In this work, it is shown how different carrier recombination paths significantly broaden the photoluminescence (PL) emission bandwidth observed in type-II self-assembled SiGe/Si(001) quantum dots (QDs). QDs grown by molecular beam epitaxy with very homogeneous size distribution, onion-shaped composition profile, and Si capping layer thicknesses varying from 0 to 1100 nm are utilized to assess the optical carrier-recombination paths. By using high-energy photons for PL excitation, electron-hole pairs can be selectively generated either above or below the QD layer and, thus, clearly access two radiative carrier recombination channels. Fitting the charge carrier capture-, loss- and recombination-dynamics to PL time-decay curves measured for different experimental configurations allows to obtain quantitative information of carrier capture-, excitonic-emission-, and Auger-recombination rates in this type-II nano-system.
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