Informace o publikaci
Diffuse X-ray scattering from local chemical inhomogeneities in InGaN layers
| Autoři | |
|---|---|
| Rok publikování | 2018 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Journal of Applied Crystallography |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | http://scripts.iucr.org/cgi-bin/paper?S1600576718007173 |
| Doi | https://doi.org/10.1107/S1600576718007173 |
| Klíčová slova | X-ray diffraction; diffuse scattering; chemical fluctuations; elasticity; InGaN |
| Popis | Diffuse X-ray scattering from random chemical inhomogeneities in epitaxial layers of InGaN/GaN was simulated using linear elasticity theory and kinematical X-ray diffraction. The simulation results show the possibility of determining the r.m.s. deviations of the local In content and its lateral correlation length from reciprocal-space maps of the scattered intensity. The reciprocal-space distribution of the intensity scattered from inhomogeneities is typical and it can be distinguished from other sources of diffuse scattering such as threading or misfit dislocations. |