Informace o publikaci
GID study of strains in Si due to patterned SiO2
| Autoři | |
|---|---|
| Rok publikování | 2001 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | J. Phys. D: Appl. Phys. |
| Fakulta / Pracoviště MU | |
| Citace | |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | GID; stress;SiO2 |
| Popis | Lateral strain modulation in a Si substrate arising from laterally patterned periodic SiO2 stripes were investigated by x-ray grazing incidence diffraction. In this diffraction geometry a depth dependent in-plane strain analysis was performed. Using finite element calculations the displacement field in the non-patterned Si substrate was calculated, which served as an input for the simulation of the diffracted intensities based on the distorted-wave Born approximation. By varying the lattice mismatch between the SiO2 stripes and the substrate, a good agreement between simulations and experimental diffraction data could be achieved. |
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